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| SOT223 PNP SILICON PLANAR SWITCHING TRANSISTOR ISSUE 4 JUNE 1996 PARTMARKING DETAIL 7 FZT4403 FZT4403 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Base Breakdown Voltage Base Cut-off Current Collector-Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio SYMBOL MIN. V(BR)CBO -40 V(BR)CEO V(BR)EBO IBEX ICEX VCE(sat) VBE(sat) hFE -0.75 30 60 100 100 20 200 8.5 -40 -5 -0.1 -0.1 -0.4 -0.75 -0.95 -1.3 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg MAX. UNIT V V V A A VALUE -40 -40 -5 -600 1.5 -55 to +150 CONDITIONS. IC=-0.1mA IC=-1mA IE=-0.1mA UNIT V V V mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). VCE=-35V, VEB(OFF) =-0.4V =-0.4V VCE=-35V, VEB(OFF) IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* IC=-0.1mA, VCE=-1V IC=-1mA, VCE=-1V IC=-10mA, VCE=-1V IC=-150mA, VCE=-2V* IC=-500mA, VCE=-2V* V V V V 300 MHz pF pF Transition Frequency Output Capacitance fT Cobo IC=-50mA, VCE=-5V f=100MHz VCB=-10V, f=100KHz IE=0 IC=0, f=100kHZ 30 Input Capacitance Cibo *Measured under pulsed conditions. Pulse width=300s. 3 - 300 |
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